bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping e7 _ 10 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtd114glt1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtd114glt1g ldtd114glt3g e7 _ 10 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) parameter symbol p c tj tstg limits 50 50 5 500 200 150 ? 55 to + 150 unit v v v ma mw c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature c v cbo v ceo v ebo i c parameter symbol min. typ. max. unit conditions 50 50 5 ? 300 ? ?? 56 7 ? ? ? ? ? ? ? ? ? ?? ? 200 10 0.5 580 0.3 13 v v v a a v mhz k ? i c = 50 a i c = 1ma i e = 720 a v cb = 50v v eb = 4v i c /i b = 50ma / 2.5ma i c = 50ma , v ce = 5v v ce = 10v , i e = ? 50ma , f = 100mhz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency emitter-base resistance ? characteristics of built-in transistor. bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r2 ? 1 2 3 sot-23 3 collec t or 2 emitter 1 base r2 rev.o 1/3 s-ldtd114glt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ldtd114glt1g s-ldtd114glt3g
leshan radio company, ltd. z electrical ch aracteristic cu rv es ;s-ldtd114glt1g 1000 500 200 100 50 20 10 5 2 1 500 1m 2m 10m 20m 5m 50m 100m 200m 500m t a = 25 c v ce = 5v fig.1 dc current transfer ratio vs. collector current dc current gain : h fe collector current : i c (c) ta = 100 c ta = 25 c ta = ? 40 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 500 1m 2m 10m 20m 5m 50m 100m 200m 500m i c / i b = 20 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c t a = 25 c rev.o 2/3 ldtd114glt1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3 ;s-ldtd114glt1g ldtd114glt1g
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